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| SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) 0.0095 @ VGS = 10 V ID (A) 110 a D D D D TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D D Automotive - 42-V Power Bus - DC/DC Conversion - Motor Drivers TO-263 G G DS S Top View Ordering Information: SUM110N10-09 SUM110N10-09-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 110a 87a 440 75 280 437.5c 3.75 -55 to 200 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70677 S-32523--Rev. C, 08-Dec-03 www.vishay.com PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 0.4 Unit _C/W 1 SUM110N10-09 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 100 V, VGS = 0 V, TJ = 125_C VDS = 100 V, VGS = 0 V, TJ = 200_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 200_C VDS = 15 V, ID = 30 A 25 120 0.0078 0.0095 0.017 0.025 S W 100 2 4 "100 1 50 10 V nA mA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 0.6 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W 1.5 20 125 55 130 VDS = 50 V, VGS = 10 V, ID = 85 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 6700 750 280 110 24 24 6.2 30 200 85 195 ns W 160 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms IF = 85 A, VGS = 0 V 1.0 70 5.5 0.19 110 240 1.5 140 10 0.35 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70677 S-32523--Rev. C, 08-Dec-03 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) I D - Drain Current (A) 6V 200 250 Transfer Characteristics 150 150 100 5V 50 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 100 TC = 125_C 50 25_C -55_C 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance 250 TC = -55_C r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) 0.012 0.015 On-Resistance vs. Drain Current 25_C 150 125_C 0.009 VGS = 10 V 100 0.006 50 0.003 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 10000 Capacitance 20 VDS = 50 V ID = 85 A Gate Charge 8000 C - Capacitance (pF) Ciss 6000 V GS - Gate-to-Source Voltage (V) 16 12 4000 8 2000 Crss 4 Coss 0 0 25 50 75 100 VDS - Drain-to-Source Voltage (V) Document Number: 70677 S-32523--Rev. C, 08-Dec-03 0 0 50 100 150 200 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 3.0 2.5 r DS(on) - On-Resistance (W) (Normalized) 2.0 1.5 1.0 0.5 100 Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C 0.0 -50 -25 0 25 50 75 100 125 150 175 200 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time 125 120 Drain Source Breakdown vs. Junction Temperature 100 IAV (A) @ TA = 25_C I Dav (a) 10 IAV (A) @ TA = 150_C 1 V (BR)DSS (V) ID = 10 mA 115 110 105 100 95 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 90 -50 -25 0 25 50 75 100 125 150 175 200 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 70677 S-32523--Rev. C, 08-Dec-03 SUM110N10-09 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 100 100 I D - Drain Current (A) 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) Limited by rDS(on) 1 ms 10 ms 100 ms dc 1000 Safe Operating Area 10 ms 100 ms 10 1 TC = 25_C Single Pulse 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 70677 S-32523--Rev. C, 08-Dec-03 www.vishay.com 5 |
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